Silicon Carbide: Leading the Revolution in Semiconductor Products with Advanced Power Devices

Silicon carbide (SiC), as a representative of third-generation wide-bandgap semiconductor products, showcases enormous application potential across power electronics, new power automobiles, high-speed railways, and various other areas due to its remarkable physical and chemical residential or commercial properties. It is a compound made up of silicon (Si) and carbon (C), including either a hexagonal wurtzite or cubic zinc blend structure. SiC flaunts an extremely high failure electrical area stamina (around 10 times that of silicon), low on-resistance, high thermal conductivity (3.3 W/cm · K compared to silicon’s 1.5 W/cm · K), and high-temperature resistance (approximately above 600 ° C). These features make it possible for SiC-based power tools to operate stably under higher voltage, regularity, and temperature problems, achieving extra effective power conversion while substantially lowering system dimension and weight. Specifically, SiC MOSFETs, compared to traditional silicon-based IGBTs, provide faster switching speeds, reduced losses, and can stand up to greater current densities; SiC Schottky diodes are widely utilized in high-frequency rectifier circuits as a result of their absolutely no reverse recuperation attributes, successfully minimizing electro-magnetic interference and power loss.

Silicon Carbide: Leading the Revolution in Semiconductor Materials with Advanced Power Devices silicon carbide igbt插图

(Silicon Carbide Powder)

Considering that the successful preparation of top notch single-crystal SiC substratums in the early 1980s, researchers have actually gotten over many key technological obstacles, consisting of high-quality single-crystal growth, defect control, epitaxial layer deposition, and processing techniques, driving the growth of the SiC industry. Internationally, a number of business focusing on SiC product and tool R&D have emerged, such as Wolfspeed (previously Cree) from the United State, Rohm Co., Ltd. from Japan, and Infineon Technologies AG from Germany. These business not only master advanced manufacturing modern technologies and patents but additionally actively take part in standard-setting and market promotion tasks, advertising the constant renovation and development of the entire commercial chain. In China, the government puts significant emphasis on the innovative abilities of the semiconductor industry, introducing a series of supportive policies to encourage business and research study organizations to boost investment in emerging fields like SiC. By the end of 2023, China’s SiC market had exceeded a scale of 10 billion yuan, with expectations of continued rapid growth in the coming years. Just recently, the international SiC market has actually seen numerous vital improvements, including the successful development of 8-inch SiC wafers, market demand development projections, plan support, and collaboration and merger occasions within the sector.

Silicon carbide demonstrates its technical benefits with various application cases. In the new energy vehicle sector, Tesla’s Design 3 was the first to take on complete SiC modules rather than standard silicon-based IGBTs, boosting inverter efficiency to 97%, enhancing acceleration performance, minimizing cooling system concern, and extending driving range. For photovoltaic power generation systems, SiC inverters much better adapt to complex grid atmospheres, demonstrating more powerful anti-interference capacities and vibrant response speeds, especially mastering high-temperature conditions. According to calculations, if all recently included photovoltaic installations nationwide embraced SiC technology, it would certainly conserve 10s of billions of yuan annually in electricity expenses. In order to high-speed train traction power supply, the most recent Fuxing bullet trains integrate some SiC parts, achieving smoother and faster beginnings and decelerations, improving system integrity and maintenance convenience. These application instances highlight the huge potential of SiC in improving efficiency, reducing prices, and boosting integrity.

Silicon Carbide: Leading the Revolution in Semiconductor Materials with Advanced Power Devices silicon carbide igbt插图1

(Silicon Carbide Powder)

Despite the lots of advantages of SiC materials and gadgets, there are still obstacles in functional application and promo, such as expense issues, standardization building and construction, and skill growing. To gradually overcome these challenges, industry professionals think it is necessary to introduce and enhance cooperation for a brighter future continually. On the one hand, deepening basic research, checking out new synthesis techniques, and boosting existing procedures are necessary to constantly decrease manufacturing costs. On the other hand, establishing and improving industry requirements is critical for promoting worked with growth amongst upstream and downstream enterprises and building a healthy ecological community. Moreover, universities and study institutes ought to increase instructional investments to grow even more top quality specialized skills.

Altogether, silicon carbide, as a very encouraging semiconductor material, is gradually transforming numerous elements of our lives– from new energy vehicles to smart grids, from high-speed trains to industrial automation. Its presence is ubiquitous. With recurring technological maturation and excellence, SiC is expected to play an irreplaceable function in many fields, bringing more convenience and benefits to human society in the coming years.

TRUNNANO is a supplier of Silicon Carbide with over 12 years experience in nano-building energy conservation and nanotechnology development. It accepts payment via Credit Card, T/T, West Union and Paypal. Trunnano will ship the goods to customers overseas through FedEx, DHL, by air, or by sea. If you want to know more about Silicon Carbide, please feel free to contact us and send an inquiry.(sales5@nanotrun.com)

All articles and pictures are from the Internet. If there are any copyright issues, please contact us in time to delete.


Inquiry us