High Purity Gallium Nitride GaN powder CAS 25617-97-4, 99.99%


Dec 27, 2022

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Gallium Nitride (GaN), a semiconductor compound which is hard and mechanically stable, has high heat resistance and thermal conductivity. This compound has a band gap between 3.4 and 3.6 eV. It is also crack resistant. Purity: 99.99% Gallium Nitride GaN (Galium Nitride) powder Gan Gallium Nitride a semiconductor compound that is hard and mechanically stable with high heat conductivity. This compound is extremely crack-resistant and has a band gap at 3.4 eV. Gallium Nitride Properties: CAS 25717-97-4 Purity ≥99.99% 25617-97-4 Appearance Yellow powder Xray Difraction Conforms with Structure Analysis of Trance Metals 200 ppm This material is ideal for the construction of satellite solar cells arrays due to its low sensitivity in ionizing radiation. Because the equipment is stable in radiation, it may be of benefit to military or spatial applications. They are ideal power amplifiers for microwave frequencies because they can operate at high temperatures and higher voltages than the gallium nitride (GaAs). GAN provides THz-compatible features as well. GaN, due to its power density and restrictions on voltage breakdown, is being considered as a candidate for 5G cell base stations. Research and applications of GaN materials represent the hotspots and frontiers in global semiconductor research. The new material is a semiconductor material for developing semiconductor devices, optical electronics and semiconductor materials, such as SiC, Diamonds. This material has been called the first generation of GE. This material is versatile because of its strong atomic bond and wide direct bandgap. It also has high chemical stability (almost zero sourcorrosion), high thermal conductivity, good electrical conductivity, excellent temperature resistance, great potential to be used in light electrons as well as high-temperature, high-power devices and microwave device applications. To receive the latest price for gallium-nitride, please send us an inquiry. Product Performance of Gallium Nitride powder: This powder, GaN, has a large direct bandgap and strong atomic bond, excellent thermal conductivity and chemical stability (nearly no acid corrosion). There are many applications for it, including optoelectronics. Technical Parameters of Gallium Nitride GAN powder: Product name Purity Size Melting Point Density gallium nitride GaN 99.99% -60-mesh 1700 6.1g/mL,25/4 light yellow Chemical Composition Of Gallium Nitride GaN Pulp: GaN Cu Zn Na Cr In Ca 99.99% 0.0005% 0.0003% 0.0005% 0.001% 0.0005% 0.0003% 0.0005% 0.005% What is The production of Gallium Nitride GAN powder ? Gallium Nitride is a semiconductor Group III-V. It has very good chemical resistance to corrosion. This compound has a strong bond between Ga (Nitrogen) which causes it to be resistant to corrosion. Ballium Nitride is a high-bandgap semiconductor, with bandgap=3.4. It has a fibrous structure and can be used for making a corrosive ambient lighting emitting device. Gallium Nitride is made by reacting Ga2O3 and NH3 at high temperatures of around 1000 ° C. Ga 2 O 3 + 2 NH 3 → 2 GaN + 3H 2 O A chemical gas phase is also capable of depositing an organometallic composition containing Ga or a nitrogen atom. The conductivity and Xray diffraction measurements confirm that there is no influence of corrosive chemicals and alkaline environment on the GaN phases. HTML3_ HTML4_ HTML5_ HTML3_ – GaN is a common light-emitting device (LED) used since 1990. Gallium Nitride is used to emit blue light from gallium Nitride. Useful for Blu-ray disc read. It is used to make semiconductor power components and radio frequency parts. Future sensors will include gallium nitride. 1. GaN is a good choice for larger TV screens and smaller, full-color panels inside trains or buses. GaN-based, efficient LEDs provide another choice for blue or green LEDs. 2. In power semiconductor fields like photovoltaics or electric vehicles, gallium nitride has been used. 3. The 5G radiofrequency fields use gallium-nitride. Because of the higher radio frequency power required and the energy consumed in 5G, 5G will slowly replace silicon-based material with gallium nutride. 4. GaN is used to fast charge mobile phones. A Gan technology is used to charge mobile phones with gallium nitride. This technology has the unique characteristics of high power, low size, and high efficiency. These attributes are key for the development of super fast charging technology. Shipping and Packing of Gallium Nitride gaN powder – There are many options for packaging, which all depend on the quantity of gallium Nitride GaN powder. Galium nitride, GaN powder packaging: vacuum Packaging, 100g to 500g or 1kg/bag at 25kg/barrel. Or as you request. Galium nitride gaN powder shipping: may be shipped by sea, air or express once the payment has been received. Advanced material 15giorni. Global chemical supplier and manufacturer (15giorni), has over 12 years of experience providing high-quality chemicals. We can provide high-quality, low-cost gallium Nitride powder. Please contact us to send an inquiry. (brad@ihpa.net)

Gallium Nitride Properties

gallium nitride powder, GaN, GaN powder, gallium mononitride 25617-97-4 GaN Molecular Weight 83.73 Appearance Light Yellow Powder Melting Point 1700 °C Heating Point N/A Density 6.1 g/cm3 Solubility of H2O N/A Exact 82.9287 Monoisotopic Weight 82.9287

Safety & Health Information

Signal word Warning Hazard Statements H317 Hazard Codes N/A Risk Codes N/A Security Statements 22-24/25 RTECS # LW9640000 Transport Information N/A Germany 3
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