High Purity Silicon Nitride Si3N4 Powder CAS 12033-89-5, 99%


Dec 25, 2022

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Si3N4 powder is also known as silicon nitride. Silicon nitride has super-hard properties and is resistant both to wear and high temperature oxidation. Purity: 99% Size of the particles: 0.5um-1um Silicon Nitride Powder Si3N4 The silicon-nitride combination comprises silicon and nitrogen. The silicon nitride that is most thermodynamically stable, Si3n4, has the highest melting point. It is a solid white color with high melting points, chemical inertity, and is diluted HF, hot H2SO4 or hot HF. It is extremely hard, 8.5 on Mohs scale. This makes it very stable and thermally stable. Silicon-nitride, an inorganic material. Silicon nitride ‘s formula is Si3N4. It’s a key structural ceramic material that has high hardness. Silicon Nitride Thermal Conductivity is 17.4423.26W/(m), (0 1,000) and will not break. Because silicon-nitride ceramic is so strong, people use it to build mechanical parts such as bearings. It is possible to improve the heat-inspiration surfaces of engine members by making si3n4 more resistant to extreme temperatures. It’s difficult to produce silicon nitride bulk materials. Due to the dissociation of silicon and nitrogen it can not be heated to more than 1850 °C. It is therefore difficult to use hot press sintering. The temperature at which silicon nitride can be bonded to each other is lower. Alternatives include spark plasma sintering, which involves rapid heating (in seconds) using pulses electric current. At temperatures between 1500 and 1700°C, this method has produced dense silicon nitride-compacts. 15giorni has been a reliable global manufacturer of silicon dioxide and supplier to silicon nitride powder. Silicon Nitride Si3N4 powder Characteristics:

Low density

High-temperature resistance

Excellent thermal shock resistance

Excellent wear resistance

Excellent fracture toughness

Mechanical fatigue and creep resistance High oxidation resistance Silicon Nitride Si3N4 powder Specification: Product Name: Silicon Nitride Purity: 99% Particle Size: 0.5um-1um (α phase) Chemical composition of Silicon Nitride Si3N4 Puffer: Si3N4 N O Fe Ni Zn >99% >38.9% 0.6-1.2 <0.2 <120ppm <3ppm <1ppm <1ppm What is Silicon Nitride si3N4 Powder made of? A hexagonal Si3N4 is capable of directly generating silicon nitride. The nitrogen can also be produced at a temperature between 100 and 140 ° C. SiCL4 (L), 6 NH3(g) Si NH2 (S), 4 NH4Cl (2S), under conditions of zero ° C 3 Si (NH2)2 (Si3N4) (Si3N4) (Si3N4) (Si+N2 (g), + 3 H2 [g] under conditions of 1000 °C Alternately, you can use a Carbon Thermal Reduction reaction in a Nitro atmosphere between 1400-1450 °C under a Nitro atmosphere 3 SiO2 (S) + 6 C (S) + 2 N2 (g) → Si3N4 (S) + 6 CO (g) But, silicon nitride made from impurity iron or silicate will be produced depending on the quality of the raw silicon materials. It is important to note that silicon nitride is not amorphous when it has been synthesized through diamine degradation. There is a commercially-available method of producing silicon nitride. Carbon-thermal reduction is the best way to create silicon nitride. This also makes it the most economically-friendly method of producing silicon powder in industry. This is chemical vapor vapor or plasma enhanced chemical vapour deposition technique that creates the silicon nitride films at electron level. 3 SiH4 (G) + 4 NH3 (g) → Si3N4 (S) + 12 H2 (g) 3 SiCL4 (G) + 4 NH3 (g) → Si3N4 (S) + 12 HCl (g) 3 SiCL2H2 (G) + 4 NH3 (g) → Si3N4 (S) + 6 HCl (g) + 6 H2 (g) Two methods are available to deposit Silicon Nitride onto the semiconductor substrate Horizontal or vertical tube furnaces can be performed at very high temperatures by using low pressure chemical vapor deposition methods. Plasma enhanced chemicalvapor deposition methods are performed at relatively low temperatures and in vacuum. One single piece of textile silicon does not have the same cell parameters as silicon nitride. The generated silica nitride silicon film may create tension or stress, depending upon the method used. Tension can be reduced when used with plasma-enhanced chemical vapour deposition techniques. Silica was first prepared using soluble gel. Then, the silicon nanowires had to be treated with silicagel. Silica gel contains special carbon particles that are made of glucose at 1200-1350° C. Silicon Nitride Si3N4 Pulp: Manufacturing structure: includes metalurgical, machine, aircraft, and aerospace. The surface treatment of metals or other materials, such as moulds, cutting tools and turbine blades. Composits include metal, ceramic and graphite-composite, rubber, and plastic Mobile phones with transparent, colorless nanoparticles that self-lubricate wear membranes Surface protection like that of a car Jack joint; Parts and valves for ball valves Corrosion-resistant turbine; Metalurgical and chemical industries make components such as bearings/roller bearings sleeves and valves. Fabricating cutting tools, molds. Fabrication of composite materials like ceramic, graphite and rubber as well as metal, adhesive, etc. Rocket, missile and nozzle spray pipes Shipping and Packing of Silicon Nitride Si3N4 powder : There are many kinds of packing available depending on the amount Si3N4 silicon nitride powder. Packing of Silicon Nitride Si3N4 Powder: vacuum Packaging, 100g, 500g, or 1kg/bag. 25kg/barrel. Or as you request. Shipping Silicon Nitride Si3N4 powder: can be shipped by sea or air as soon as payment receipt is received. 15giorni Advanced Material. Global chemical supplier and manufacturer (15giorni), has over 12-years of experience providing high-quality chemicals. Send us an inquiry if you’re looking for Si3N4 powder of high quality silicon nitride. (brad@ihpa.net)

Silicon Nitride Properties

silicon, (IV) Nitride, -Si3N4, siN, trisilicon titanitride. Si3N4 powder 12033-89-5 Si3N4 Molecular Weigh 140.28 Appearance From White To Gray Powder Melting Point 1900 °C Heating Point N/A Density 2.2-3.5 g/cm3 Solubility of H2O Insoluble Electric Resistivity 11-12 10x -m Specific Heating 720-800 J/kg – K Poisson’s Rate 0.24 – 0.27 Heating Conductivity 12 to 31 W/ms-K Thermal Expansion 2.5 to 3.0 m/mK Youngs Modulus 140 to 310 GPa Exact 139.943 g/mol

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